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PD - 93826D
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
Product Summary
Part Number IRHY57130CM IRHY53130CM IRHY54130CM Radiation Level 100K Rads (Si) 300K Rads (Si) 500K Rads (Si) RDS(on) 0.07 0.07 0.07 ID 18A* 18A* 18A* 18A* QPL Part Number JANSR2N7484T3 JANSF2N7484T3 JANSG2N7484T3 JANSH2N7484T3
IRHY57130CM JANSR2N7484T3 100V, N-CHANNEL
REF: MIL-PRF-19500/702 TECHNOLOGY
5
IRHY58130CM1000K Rads (Si) 0.085
TM
TO-257AA
International Rectifier's R5 technology provides high performance power MOSFETs for space applications.These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n
Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Lead Temperature Weight * Current is limited by package For footnotes refer to the last page 18* 14 72 75 0.6 20 87 18 7.5 1.4 -55 to 150
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
300 (0.063in./1.6mm from case for 10sec) 4.3 (Typical)
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1
4/26/06
IRHY57130CM, JANSR2N7484T3
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
100 -- -- 2.0 13 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.11 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.8 -- -- 0.07 4.0 -- 10 25 100 -100 50 7.4 20 25 100 35 30 -- V V/C V S( ) A
Test Conditions
VGS = 0V, I D = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 14A A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 14A A VDS= 80V ,VGS=0V VDS = 80V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, I D = 18A VDS = 50V VDD = 50V, ID = 18A, VGS =12V, RG = 7.5
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
Measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) VGS = 0V, VDS = 25V f = 1.0MHz
Ciss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
1005 365 50
-- -- --
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 18* 72 1.2 250 850
Test Conditions
A
V ns nC Tj = 25C, IS = 18A, VGS = 0V A Tj = 25C, IF = 18A, di/dt 100A/s VDD 25V A
Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC RthJA Junction-to-Case Junction-to-Ambient
Min Typ Max
-- -- -- -- 1.67 80
Units
C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page
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Radiation Characteristics
IRHY57130CM, JANSR2N7484T3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source A On-State Resistance (TO-3) Static Drain-to-Source A On-State Resistance (TO-257AA) Diode Forward Voltage A Up to 500K Rads(Si)1 1000K Rads (Si)2 Units Min Max Min Max 100 2.0 -- -- -- -- -- -- -- 4.0 100 -100 10 0.074 0.07 1.2 100 1.5 -- -- -- -- -- -- -- 4.0 100 -100 25 0.09 0.085 1.2 V nA A V
Test Conditions
VGS = 0V, I D = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS = 80V, VGS =0V VGS = 12V, ID =14A VGS = 12V, ID =14A V GS = 0V, IS = 18A
1. Part numbers IRHY57130CM (JANSR2N7484T3), IRHY53130CM (JANSF2N7484T3) and IRHY54130CM (JANSG2N7484T3) 2. Part number IRHY58130CM (JANSH2N7484T3)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion Br I Au LET (MeV/(mg/cm2)) 36.7 59.4 82.3 Energy (MeV) 309 341 350 VDS (V) Range (m) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 39.5 100 100 100 100 100 32.5 100 100 100 35 25 28.4 100 100 80 25
120 100 80 VDS 60 40 20 0 0 -5 -8 VGS -10 -15 -20 Br I Au
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHY57130CM, JANSR2N7484T3
Pre-Irradiation
100
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
100
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
5.0V
10
10
5.0V
1 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100
1 0.1
20s PULSE WIDTH TJ = 150 C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
I D , Drain-to-Source Current (A)
TJ = 25 C
RDS(on) , Drain-to-Source On Resistance (Normalized)
18A 22A ID = 16A
2.0
TJ = 150 C
1.5
1.0
0.5
10 5.0
V DS = 15 50V 20s PULSE WIDTH 6.0 7.0 8.0 9.0 10.0
0.0 -60 -40 -20
VGS = 12V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
4
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Pre-Irradiation
IRHY57130CM, JANSR2N7484T3
2000
1600
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = 22A 16A 18A
VDS = 80V VDS = 50V VDS = 20V
C, Capacitance (pF)
15
1200
Ciss
10
800
Coss
5
400
Crss
0 1 10 100
0 0 10 20
FOR TEST CIRCUIT SEE FIGURE 13
30 40 50
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
ISD , Reverse Drain Current (A)
10
TJ = 150 C
ID, Drain-to-Source Current (A)
100
10
TJ = 25 C
1
100s 1ms
1 Tc = 25C Tj = 150C Single Pulse 0.1 1 10 100 1000 VDS , Drain-toSource Voltage (V)
10ms
0.1 0.4
V GS = 0 V
0.6 0.8 1.0 1.2
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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5
IRHY57130CM, JANSR2N7484T3
Pre-Irradiation
25
LIMITED BY PACKAGE
VGS
20
VDS
RD
ID , Drain Current (A)
RG
D.U.T.
+
-V DD
15
VGS
Pulse Width 1 s Duty Factor 0.1 %
10
Fig 10a. Switching Time Test Circuit
5
VDS 90%
0
25
50
75
100
125
150
TC , Case Temperature ( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHY57130CM, JANSR2N7484T3
150
EAS , Single Pulse Avalanche Energy (mJ)
TOP
120
15V
BOTTOM
ID 7.2A 10A 18A 16A
VDS
L
DRIVER
90
RG
. D.U.T
IAS tp
+ - VDD
A
60
VGS 20V
0.01
Fig 12a. Unclamped Inductive Test Circuit
30
0
25
50
75
100
125
150
V(BR)DSS tp
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRHY57130CM, JANSR2N7484T3
Pre-Irradiation
Footnotes:
A Repetitive Rating; Pulse width limited by
maximum junction temperature. A VDD = 50V, starting TJ = 25C, L= 0.53mH Peak IL = 18A, VGS = 12V A I SD 18A, di/dt 155A/s, VDD 100V, TJ 150C
A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias.
12 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. 80 volt VDS applied and V GS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- TO-257AA
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PIN ASSIGNMENTS 1 = DRAIN 2 = SOURCE 3 = GATE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/2006
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